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BC846BPN/DG/B3X

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BC846BPN/DG/B3X

TRANS NPN/PNP 65V 0.1A 6TSSOP

Manufacturer: Nexperia USA Inc.

Categories: Bipolar Transistor Arrays

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Nexperia USA Inc. BC846BPN-DG-B3X is a bipolar transistor array featuring one NPN and one PNP transistor. This device offers a 65V collector-emitter breakdown voltage and a continuous collector current of 100mA. The transistor array boasts a transition frequency of 100MHz and a maximum power dissipation of 300mW. With a minimum DC current gain (hFE) of 200 at 2mA and 5V, it supports efficient amplification. The Vce saturation is a maximum of 300mV at 5mA and 100mA. The component is supplied in a 6-TSSOP package, suitable for surface mounting, and delivered on tape and reel. This transistor array finds applications in general-purpose switching and amplification across various electronic systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type1 NPN, 1 PNP
Operating Temperature150°C (TJ)
Power - Max300mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)65V
Vce Saturation (Max) @ Ib, Ic300mV @ 5mA, 100mA
Current - Collector Cutoff (Max)15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 5V
Frequency - Transition100MHz
Supplier Device Package6-TSSOP

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