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BC817DPN/DG/B2,115

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BC817DPN/DG/B2,115

TRANS GEN PURPOSE SC-74

Manufacturer: Nexperia USA Inc.

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

Nexperia USA Inc. presents the BC817DPN-DG-B2-115, a bipolar transistor array featuring one NPN and one PNP transistor within a single 6-TSOP (SC-74, SOT-457) package. This device offers a collector-emitter breakdown voltage of 45V and a maximum collector current of 500mA. The NPN transistor exhibits a transition frequency of 100MHz, while the PNP transistor operates at 80MHz. Key specifications include a minimum DC current gain (hFE) of 160 at 100mA, 1V, and a maximum collector saturation voltage of 700mV at 50mA, 500mA. With a maximum power dissipation of 600mW and an operating junction temperature of 150°C, this component is suitable for applications in consumer electronics and industrial automation. The device is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-74, SOT-457
Mounting TypeSurface Mount
Transistor Type1 NPN, 1 PNP
Operating Temperature150°C (TJ)
Power - Max600mW
Current - Collector (Ic) (Max)500mA
Voltage - Collector Emitter Breakdown (Max)45V
Vce Saturation (Max) @ Ib, Ic700mV @ 50mA, 500mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 100mA, 1V
Frequency - Transition100MHz, 80MHz
Supplier Device Package6-TSOP

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