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Bipolar Transistor Arrays, Pre-Biased

PUMH9/ZLZ

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PUMH9/ZLZ

TRANS PREBIAS

Manufacturer: Nexperia USA Inc.

Categories: Bipolar Transistor Arrays, Pre-Biased

Quality Control: Learn More

Nexperia USA Inc. offers the PUMH9-ZLZ, a pre-biased bipolar transistor array featuring two NPN transistors. This component is qualified to AEC-Q101 for automotive applications and provides a collector-emitter breakdown voltage of 50V with a maximum collector current of 100mA. The device exhibits a transition frequency of 230MHz and a power dissipation of 300mW. Key parameters include a minimum DC current gain (hFE) of 100 at 5mA collector current and 5V Vce, and a collector cutoff current of 100nA. Internal base resistors of 10kOhms and emitter base resistors of 47kOhms are integrated. The PUMH9-ZLZ is supplied in a 6-TSSOP package, suitable for surface mounting. This dual NPN pre-biased transistor is utilized in various automotive electronic systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type2 NPN - Pre-Biased (Dual)
Power - Max300mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic100mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 5mA, 5V
Frequency - Transition230MHz
Resistor - Base (R1)10kOhms
Resistor - Emitter Base (R2)47kOhms
Supplier Device Package6-TSSOP
GradeAutomotive
QualificationAEC-Q101

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