PUMH2/DG/B3,115
TRANS PREBIAS 2NPN 50V 6TSSOPManufacturer: Nexperia USA Inc.
Categories: Bipolar Transistor Arrays, Pre-Biased
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Nexperia USA Inc. PUMH2-DG-B3-115 is a dual, pre-biased bipolar transistor array featuring two NPN transistors. This component operates with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, achieving a transition frequency of 230MHz. It includes integrated base resistors (R1) of 47kOhms and emitter base resistors (R2) of 47kOhms, simplifying circuit design and reducing component count. The device offers a minimum DC current gain (hFE) of 80 at 5mA collector current and 5V collector-emitter voltage, with a Vce saturation of 150mV at 500µA base current and 10mA collector current. With a maximum power dissipation of 300mW, it is supplied in a 6-TSSOP package, suitable for surface mounting. This component finds application in areas such as digital logic, signal switching, and general-purpose amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 5V |
| Frequency - Transition | 230MHz |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | 6-TSSOP |
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