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Bipolar Transistor Arrays, Pre-Biased

PUMH10/ZLX

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PUMH10/ZLX

TRANS PREBIAS

Manufacturer: Nexperia USA Inc.

Categories: Bipolar Transistor Arrays, Pre-Biased

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Nexperia USA Inc. PUMH10-ZLX is a pre-biased bipolar transistor (BJT) featuring two NPN configurations in a single package. This automotive-grade component offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. With a transition frequency of 230MHz and a power dissipation of 300mW, it is suitable for applications requiring precise signal switching and amplification. The integrated base resistors are specified as 2.2kOhms (R1) and 47kOhms (R2). The device achieves a minimum DC current gain (hFE) of 100 at 10mA collector current and 5V Vce. Saturation voltage (Vce(sat)) is 100mV at 250µA base current and 5mA collector current. The PUMH10-ZLX is supplied in a 6-TSSOP surface-mount package, commonly used in automotive electronics and industrial control systems. Qualification to AEC-Q101 standards ensures reliability in demanding environments.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type2 NPN - Pre-Biased (Dual)
Power - Max300mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic100mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 5V
Frequency - Transition230MHz
Resistor - Base (R1)2.2kOhms
Resistor - Emitter Base (R2)47kOhms
Supplier Device Package6-TSSOP
GradeAutomotive
QualificationAEC-Q101

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