PUMH1/DG/B3,115
TRANS PREBIAS 2NPN 50V 6TSSOPManufacturer: Nexperia USA Inc.
Categories: Bipolar Transistor Arrays, Pre-Biased
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The Nexperia USA Inc. PUMH1-DG-B3-115 is a pre-biased bipolar transistor array featuring two NPN transistors within a 6-TSSOP package. This device offers a Collector-Emitter Breakdown Voltage of 50V and a maximum Collector Current of 100mA. It operates with a transition frequency of 230MHz and a maximum power dissipation of 300mW. The integrated base resistors (R1 and R2) are both specified at 22kOhms. This component is suitable for surface mount applications and is supplied on a Tape & Reel. The PUMH1-DG-B3-115 finds utility in various industrial and consumer electronics, including digital logic circuits and interface applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 5V |
| Frequency - Transition | 230MHz |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | 22kOhms |
| Supplier Device Package | 6-TSSOP |
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