PUMD6HX
PUMD6HXManufacturer: Nexperia USA Inc.
Categories: Bipolar Transistor Arrays, Pre-Biased
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The Nexperia USA Inc. PUMD6HX is a pre-biased bipolar transistor array featuring one NPN and one PNP transistor. This device, housed in a 6-TSSOP package, offers a collector-emitter breakdown voltage of 50V and supports a continuous collector current of up to 100mA. Key performance characteristics include a minimum DC current gain (hFE) of 200 at 1mA and 5V, with transition frequencies of 230MHz for the NPN and 180MHz for the PNP. The NPN transistor includes a 4.7kO base resistor, simplifying biasing. Maximum power dissipation is rated at 240mW. This component is suitable for applications in consumer electronics and industrial automation where space-constrained, low-power switching and amplification are required.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN Pre-Biased, 1 PNP |
| Power - Max | 240mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1mA, 5V |
| Frequency - Transition | 230MHz, 180MHz |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | 6-TSSOP |
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