PUMD2/DG/B3,135
TRANS PREBIAS 1NPN 1PNP 6TSSOPManufacturer: Nexperia USA Inc.
Categories: Bipolar Transistor Arrays, Pre-Biased
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Nexperia USA Inc. PUMD2-DG-B3-135 is a pre-biased bipolar transistor array featuring a complementary 1 NPN and 1 PNP configuration. This dual transistor is housed in a compact 6-TSSOP package, designed for surface mounting. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The device boasts a transition frequency of 230MHz for the NPN transistor and 180MHz for the PNP transistor, with a maximum power dissipation of 300mW. Each internal transistor includes integrated base resistors of 22kOhms (R1) and emitter-base resistors of 22kOhms (R2), simplifying circuit design. Typical applications include digital logic, switching, and general-purpose amplification in consumer electronics and industrial control systems. The PUMD2-DG-B3-135 is supplied on a Tape & Reel (TR) for automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 5V |
| Frequency - Transition | 230MHz, 180MHz |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | 22kOhms |
| Supplier Device Package | 6-TSSOP |
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