PUMD2/DG/B3,115
TRANS PREBIAS 1NPN 1PNP 6TSSOPManufacturer: Nexperia USA Inc.
Categories: Bipolar Transistor Arrays, Pre-Biased
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Nexperia USA Inc. PUMD2-DG-B3-115 is a dual pre-biased bipolar transistor array featuring one NPN and one PNP transistor in a 6-TSSOP package. This device offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The transistors are equipped with integrated base resistors, specified as 22kOhms for both R1 and R2, simplifying circuit design by eliminating external biasing components. Typical DC current gain (hFE) is a minimum of 60 at 5mA and 5V for both transistors. The transition frequencies are 230MHz for the NPN and 180MHz for the PNP. With a maximum power dissipation of 300mW, this component is suitable for surface mount applications. The PUMD2-DG-B3-115 finds application in various industrial sectors including consumer electronics, automotive, and industrial automation, particularly in logic level shifting and general-purpose switching. The component is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 5V |
| Frequency - Transition | 230MHz, 180MHz |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | 22kOhms |
| Supplier Device Package | 6-TSSOP |
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