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Bipolar Transistor Arrays, Pre-Biased

PUMD12/ZLF

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PUMD12/ZLF

TRANS PREBIAS

Manufacturer: Nexperia USA Inc.

Categories: Bipolar Transistor Arrays, Pre-Biased

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Nexperia USA Inc.'s PUMD12-ZLF is a pre-biased dual bipolar transistor (BJT) featuring one NPN and one PNP configuration. This AEC-Q101 qualified component is designed for automotive applications and offers a collector-emitter breakdown voltage of 50V. The device operates with a maximum collector current of 100mA and a transition frequency of 230MHz for the NPN and 180MHz for the PNP. It includes integrated base resistors, specified as 47kOhms for R1 and 47kOhms for R2, facilitating simplified circuit design. The PUMD12-ZLF is housed in a 6-TSSOP package, suitable for surface mounting, with a maximum power dissipation of 300mW. Typical saturation voltage (Vce Sat) is 150mV at 500µA base current and 10mA collector current, with a minimum DC current gain (hFE) of 80 at 5mA collector current and 5V Vce. This component is commonly utilized in driver circuits and logic level shifting applications within automotive electronic systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max300mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic150mV @ 500µA, 10mA
Current - Collector Cutoff (Max)1µA
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 5V
Frequency - Transition230MHz, 180MHz
Resistor - Base (R1)47kOhms
Resistor - Emitter Base (R2)47kOhms
Supplier Device Package6-TSSOP
GradeAutomotive
QualificationAEC-Q101

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