PUMD12/DG/B3,115
TRANS PREBIAS 1NPN 1PNP 6TSSOPManufacturer: Nexperia USA Inc.
Categories: Bipolar Transistor Arrays, Pre-Biased
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Nexperia USA Inc. introduces the PUMD12-DG-B3-115, a pre-biased bipolar transistor array. This component integrates one NPN and one PNP transistor in a single 6-TSSOP package, designed for surface mount applications. Each transistor features internal base resistors (R1 = 47kO, R2 = 47kO) enabling direct interface with logic signals. Key specifications include a collector-emitter breakdown voltage of 50V, a maximum collector current of 100mA, and a transition frequency of 230MHz for the NPN and 180MHz for the PNP. The device offers a minimum DC current gain (hFE) of 80 at 5mA, 5V. With a maximum power dissipation of 300mW and a low collector cutoff current of 1µA, this transistor array is suitable for applications in consumer electronics, industrial control, and signal processing. It is supplied on tape and reel for automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 5V |
| Frequency - Transition | 230MHz, 180MHz |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | 6-TSSOP |
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