PUMB2/DG/B3,115
TRANS PREBIAS 2PNP 50V 6TSSOPManufacturer: Nexperia USA Inc.
Categories: Bipolar Transistor Arrays, Pre-Biased
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Nexperia USA Inc. PUMB2-DG-B3-115 is a pre-biased bipolar transistor array featuring two PNP transistors in a 6-TSSOP package. This device offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. With an 180MHz transition frequency and a power dissipation of 300mW, it is suitable for applications requiring signal amplification and switching. The integrated base resistors are specified at 47kOhms for both R1 and R2, contributing to a minimum DC current gain (hFE) of 80 at 5mA collector current and 5V Vce. Saturation voltage is 150mV at 500µA base current and 10mA collector current. This component is commonly utilized in consumer electronics, industrial control systems, and communication infrastructure. The product is supplied in a Tape & Reel (TR) package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 5V |
| Frequency - Transition | 180MHz |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | 6-TSSOP |
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