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PUMB1/DG/B3,115

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PUMB1/DG/B3,115

TRANS PREBIAS 2PNP 50V 6TSSOP

Manufacturer: Nexperia USA Inc.

Categories: Bipolar Transistor Arrays, Pre-Biased

Quality Control: Learn More

Nexperia USA Inc. PUMB1-DG-B3-115 is a pre-biased dual PNP bipolar transistor array in a 6-TSSOP package. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The device offers a minimum DC current gain (hFE) of 60 at 5mA, 5V and a transition frequency of 180MHz. Saturation voltage at 500µA base current and 10mA collector current is 150mV. Internal base resistors of 22kOhms are integrated for simplified circuit design. The PUMB1-DG-B3-115 is suitable for surface mounting and is supplied on tape and reel. This transistor array finds application in industrial and consumer electronics for switching and amplification circuits.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type2 PNP - Pre-Biased (Dual)
Power - Max300mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic150mV @ 500µA, 10mA
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5mA, 5V
Frequency - Transition180MHz
Resistor - Base (R1)22kOhms
Resistor - Emitter Base (R2)22kOhms
Supplier Device Package6-TSSOP

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