PEMH9,115
TRANS PREBIAS 2NPN 50V SOT666Manufacturer: Nexperia USA Inc.
Categories: Bipolar Transistor Arrays, Pre-Biased
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Nexperia USA Inc. PEMH9-115 is a dual pre-biased NPN bipolar transistor array in a SOT-666 package. This device features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. The integrated base resistors are 10kOhms (R1) and 47kOhms (R2), enabling higher input impedance and reduced component count. It offers a minimum DC current gain (hFE) of 100 at 5mA collector current and 5V Vce. The saturation voltage (Vce Sat) is a maximum of 100mV at 250µA base current and 5mA collector current. With a maximum power dissipation of 300mW, this component is suitable for surface mount applications. It is commonly utilized in industrial automation, consumer electronics, and communication systems for switching and amplification functions. The device is supplied on a tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 5mA, 5V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-666 |
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