PEMH4,115
TRANS PREBIAS 2NPN 50V SOT666Manufacturer: Nexperia USA Inc.
Categories: Bipolar Transistor Arrays, Pre-Biased
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Nexperia USA Inc. PEMH4-115 is a pre-biased bipolar transistor featuring two NPN elements within a SOT-666 package. This dual transistor configuration provides a minimum DC current gain (hFE) of 200 at 1mA collector current and 5V Vce. The collector emitter breakdown voltage is rated at 50V, with a maximum collector current of 100mA and a collector cutoff current of 1µA. The device exhibits a Vce saturation of 150mV at 500µA base current and 10mA collector current. Each pre-biased transistor includes an internal base resistor of 10kOhms. With a maximum power dissipation of 300mW, the PEMH4-115 is suitable for surface mounting and is supplied on tape and reel. This component finds application in areas such as consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1mA, 5V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | SOT-666 |
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