PEMH20,115
TRANS PREBIAS 2NPN 50V SOT666Manufacturer: Nexperia USA Inc.
Categories: Bipolar Transistor Arrays, Pre-Biased
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Nexperia USA Inc. PEMH20-115 is a dual, pre-biased NPN bipolar transistor array designed for surface mount applications. This component features two NPN transistors integrated within a single SOT-666 package, utilizing a standard SOT-563 footprint. Each transistor offers a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 100mA. The device includes integrated base resistors, R1 and R2, both specified at 2.2kOhms, simplifying circuit design by eliminating the need for external biasing components. With a maximum power dissipation of 300mW, this transistor array is suitable for use in general-purpose switching and amplification circuits. Its typical applications span industrial automation, consumer electronics, and communication systems. The DC current gain (hFE) is a minimum of 30 at 20mA collector current and 5V collector-emitter voltage. The saturation voltage (Vce Sat) is a maximum of 150mV at 500µA base current and 10mA collector current. The device is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 20mA, 5V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 2.2kOhms |
| Resistor - Emitter Base (R2) | 2.2kOhms |
| Supplier Device Package | SOT-666 |
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