PEMH18,115
TRANS PREBIAS 2NPN 50V SOT666Manufacturer: Nexperia USA Inc.
Categories: Bipolar Transistor Arrays, Pre-Biased
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Nexperia USA Inc. PEMH18-115 is a dual, pre-biased NPN bipolar transistor array in a SOT-666 package. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The integrated base resistors consist of R1 at 4.7kOhms and R2 at 10kOhms, facilitating simplified circuit design. With a maximum power dissipation of 300mW and a saturation voltage of 100mV @ 500µA, 10mA, this device is suitable for applications requiring direct switching or logic buffering. The minimum DC current gain (hFE) is 50 at 10mA, 5V. This component is commonly found in portable electronics and industrial control systems. The PEMH18-115 is supplied on a Tape & Reel (TR) for automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | SOT-666 |
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