PEMH16,115
TRANS PREBIAS 2NPN 50V SOT666Manufacturer: Nexperia USA Inc.
Categories: Bipolar Transistor Arrays, Pre-Biased
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Nexperia USA Inc. PEMH16-115 is a dual NPN pre-biased bipolar transistor array in a SOT-666 package. This device features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. With an integrated 22kO base resistor (R1) and 47kO emitter base resistor (R2), it simplifies circuit design for applications requiring a stable bias point. The minimum DC current gain (hFE) is 80 at 5mA collector current and 5V collector-emitter voltage. Maximum power dissipation is 300mW. The device is supplied on tape and reel. This component is suitable for use in consumer electronics and industrial automation systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 5V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-666 |
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