PEMH15,115
TRANS PREBIAS 2NPN 50V SOT666Manufacturer: Nexperia USA Inc.
Categories: Bipolar Transistor Arrays, Pre-Biased
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Nexperia USA Inc. PEMH15-115 is a dual 2 NPN pre-biased bipolar transistor array in a SOT-666 package. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The device includes integrated base resistors, R1 and R2, both specified at 4.7kOhms, simplifying circuit design. Its DC current gain (hFE) is a minimum of 30 at 10mA collector current and 5V collector-emitter voltage. The saturation voltage (Vce Sat) is a maximum of 150mV at 500µA base current and 10mA collector current. With a maximum power dissipation of 300mW, this transistor array is suitable for surface mount applications. It is commonly utilized in consumer electronics, industrial automation, and communication systems. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | 4.7kOhms |
| Supplier Device Package | SOT-666 |
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