PEMH13,115
TRANS PREBIAS 2NPN 50V SOT666Manufacturer: Nexperia USA Inc.
Categories: Bipolar Transistor Arrays, Pre-Biased
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Nexperia USA Inc. PEMH13-115 is a dual NPN pre-biased bipolar transistor array. This surface mount component, housed in a SOT-666 package, offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It features integrated base resistors of 4.7kOhms (R1) and 47kOhms (R2). The device exhibits a minimum DC current gain (hFE) of 100 at 10mA collector current and 5V Vce, with a saturation voltage (Vce(sat)) of 100mV at 250µA base current and 5mA collector current. The maximum power dissipation is 300mW, and the collector cutoff current is a maximum of 1µA. This component is suitable for applications in consumer electronics and industrial automation. The PEMH13-115 is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 5V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-666 |
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