PEMH11,315
TRANS PREBIAS 2NPN 50V SOT666Manufacturer: Nexperia USA Inc.
Categories: Bipolar Transistor Arrays, Pre-Biased
Quality Control: Learn More
Nexperia USA Inc. PEMH11-315 is a dual NPN pre-biased bipolar transistor array. This device features integrated base resistors, simplifying circuit design and reducing component count. It offers a collector emitter breakdown voltage of 50V and a maximum collector current of 100mA. The minimum DC current gain (hFE) is 30 at 5mA collector current and 5V Vce. Saturation voltage is specified at a maximum of 150mV for 500µA base current and 10mA collector current. The component has a maximum power dissipation of 300mW and is supplied in a SOT-666 surface mount package. The integrated base resistors are 10kOhms for both transistors. This component is suitable for applications in consumer electronics and industrial control systems where simplified biasing and reduced component count are beneficial.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | SOT-666 |
Request a Quote
Clients Also Buy
PEMH16,115
TRANS PREBIAS 2NPN 50V SOT666
PUMB3HX
PUMB3HX
PUMB1/DG/B3,115
TRANS PREBIAS 2PNP 50V 6TSSOP
