PEMH1,115
TRANS PREBIAS 2NPN 50V SOT666Manufacturer: Nexperia USA Inc.
Categories: Bipolar Transistor Arrays, Pre-Biased
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Nexperia USA Inc. PEMH1-115 is a dual NPN pre-biased bipolar transistor array housed in a SOT-666 package. This component features integrated base resistors (R1 and R2) of 22kOhms, simplifying circuit design. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The device exhibits a minimum DC current gain (hFE) of 60 at 5mA collector current and 5V Vce, with a saturation voltage (Vce Sat) of 150mV at 500µA base current and 10mA collector current. The maximum power dissipation is 300mW. This component is suitable for applications in consumer electronics and industrial automation. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 5V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | 22kOhms |
| Supplier Device Package | SOT-666 |
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