PEMD9,315
TRANS PREBIAS 1NPN 1PNP SOT666Manufacturer: Nexperia USA Inc.
Categories: Bipolar Transistor Arrays, Pre-Biased
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Nexperia USA Inc. PEMD9-315 is a dual pre-biased bipolar transistor (BJT) featuring one NPN and one PNP element in a SOT-666 package. This surface-mount device is rated for a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The component offers a minimum DC current gain (hFE) of 100 at 5mA collector current and 5V Vce. Internal base resistors of 10kOhms (R1) and emitter base resistors of 47kOhms (R2) are integrated, simplifying circuit design. The saturation voltage (Vce Sat) is a nominal 100mV at 250µA base current and 5mA collector current. With a maximum power dissipation of 300mW, this transistor array is suitable for applications in industrial automation and consumer electronics. It is supplied in a Tape & Reel (TR) package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 5mA, 5V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-666 |
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