PEMD9,115
TRANS PREBIAS 1NPN 1PNP SOT666Manufacturer: Nexperia USA Inc.
Categories: Bipolar Transistor Arrays, Pre-Biased
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Nexperia USA Inc. PEMD9-115 is a pre-biased bipolar transistor array featuring one NPN and one PNP transistor within a SOT-666 package. This dual transistor configuration offers a collector current (Ic) of up to 100mA and a collector-emitter breakdown voltage (Vce) of 50V. The device is supplied with integrated base resistors of 10kOhms and 47kOhms, facilitating simplified circuit design. With a minimum DC current gain (hFE) of 100 at 5mA, 5V, and a saturation voltage (Vce Sat) of 100mV at 250µA, 5mA, this component is suitable for applications requiring reduced component count and simplified biasing. The PEMD9-115 is commonly utilized in consumer electronics, industrial automation, and communication systems. It is provided in a Tape & Reel (TR) package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 5mA, 5V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-666 |
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