PEMD6,115
TRANS PREBIAS 1NPN 1PNP SOT666Manufacturer: Nexperia USA Inc.
Categories: Bipolar Transistor Arrays, Pre-Biased
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Nexperia USA Inc. offers the PEMD6-115, a pre-biased bipolar transistor array featuring one NPN and one PNP transistor in a single SOT-666 package. This dual pre-biased configuration simplifies circuit design by integrating bias resistors, providing a fixed base current and a guaranteed DC current gain (hFE) of 200 minimum at 1mA collector current and 5V collector-emitter voltage. The device supports a maximum collector current of 100mA and a collector-emitter breakdown voltage of 50V. With a power dissipation of 300mW, it is suitable for surface mount applications. The base of the NPN transistor includes a 4.7kO resistor. Typical applications include general-purpose switching and amplification in consumer electronics and industrial automation. The PEMD6-115 is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1mA, 5V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | SOT-666 |
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