PEMD4,115
TRANS PREBIAS 1NPN 1PNP SOT666Manufacturer: Nexperia USA Inc.
Categories: Bipolar Transistor Arrays, Pre-Biased
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Nexperia USA Inc. PEMD4-115 is a dual pre-biased bipolar transistor array featuring one NPN and one PNP transistor in a SOT-666 package. This device offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The integrated base resistors are specified at 10kOhms. Exhibiting a minimum DC current gain (hFE) of 200 at 1mA collector current and 5V collector-emitter voltage, the PEMD4-115 has a saturation voltage (Vce) of 150mV at 500µA base current and 10mA collector current. The component's maximum power dissipation is 300mW. The PEMD4-115 is commonly utilized in industrial and consumer electronics applications requiring simple switching and amplification circuits. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1mA, 5V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | SOT-666 |
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