PEMD30,315
TRANS PREBIAS 1NPN 1PNP SOT666Manufacturer: Nexperia USA Inc.
Categories: Bipolar Transistor Arrays, Pre-Biased
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Nexperia USA Inc. PEMD30-315 is a dual pre-biased bipolar transistor featuring one NPN and one PNP element in a SOT-666 package. This device offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The integrated base resistors are 2.2kOhms, facilitating simplified circuit design. With a DC current gain (hFE) of at least 30 at 20mA and 5V, and a saturation voltage (Vce Sat) of 150mV at 500µA and 10mA, the PEMD30-315 is suitable for applications requiring reduced component count and simplified biasing. The component dissipates a maximum power of 300mW and is supplied in Tape & Reel packaging. This transistor array is commonly employed in consumer electronics and industrial automation for switching and amplification functions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 20mA, 5V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 2.2kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | SOT-666 |
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