PEMD30,115
TRANS PREBIAS 1NPN 1PNP SOT666Manufacturer: Nexperia USA Inc.
Categories: Bipolar Transistor Arrays, Pre-Biased
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Nexperia USA Inc. presents the PEMD30-115, a pre-biased bipolar transistor array featuring a dual configuration with one NPN and one PNP transistor. This surface mount component, packaged in SOT-666, offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The integrated base resistors are specified at 2.2kOhms, facilitating simplified circuit design. With a maximum power dissipation of 300mW and a minimum DC current gain (hFE) of 30 at 20mA and 5V, the PEMD30-115 is suitable for applications requiring precise switching and amplification. Key specifications include a Vce saturation of 150mV at 500µA and 10mA, and a collector cutoff current of 1µA. This device finds application in various industrial and consumer electronics, particularly in areas such as digital logic interfacing and signal conditioning. The component is supplied on a tape and reel for efficient automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 20mA, 5V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 2.2kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | SOT-666 |
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