PEMD3,315
TRANS PREBIAS 1NPN 1PNP SOT666Manufacturer: Nexperia USA Inc.
Categories: Bipolar Transistor Arrays, Pre-Biased
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Nexperia's PEMD3-315 is a pre-biased bipolar transistor array featuring a dual configuration of one NPN and one PNP transistor in a SOT-666 package. This device offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The integrated base resistors are specified at 10kOhms for both R1 (NPN) and R2 (PNP), facilitating simplified circuit design. It exhibits a minimum DC current gain (hFE) of 30 at 5mA collector current and 5V Vce, with a saturation voltage (Vce(sat)) of 150mV at 500µA base current and 10mA collector current. The maximum power dissipation is 300mW. This component is commonly found in applications requiring efficient switching and signal amplification, including consumer electronics and industrial control systems. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | SOT-666 |
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