PEMD3,115
TRANS PREBIAS 1NPN 1PNP SOT666Manufacturer: Nexperia USA Inc.
Categories: Bipolar Transistor Arrays, Pre-Biased
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Nexperia USA Inc. PEMD3-115 is a dual pre-biased bipolar transistor (BJT) featuring one NPN and one PNP element within a SOT-666 package. This device offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The integrated base resistors are 10kOhms for both the NPN and PNP transistors, facilitating simplified circuit design. With a power dissipation of 300mW and a minimum DC current gain (hFE) of 30 at 5mA/5V, the PEMD3-115 is suitable for various applications including signal switching and amplification in consumer electronics and industrial automation. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | SOT-666 |
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