PEMD24,115
TRANS PREBIAS 1NPN 1PNP SOT666Manufacturer: Nexperia USA Inc.
Categories: Bipolar Transistor Arrays, Pre-Biased
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Nexperia USA Inc. presents the PEMD24-115, a dual pre-biased bipolar transistor array in a SOT-666 package. This component integrates one NPN and one PNP transistor, each with internal base resistors, simplifying circuit design and reducing component count. The device features a collector-emitter breakdown voltage of 50V and a maximum collector current of 20mA. With a minimum DC current gain (hFE) of 80 at 5mA and 5V, and a Vce saturation of 150mV at 250µA and 5mA, the PEMD24-115 offers efficient switching characteristics. The integrated base resistors, R1 and R2, are both specified at 100kOhms, providing a defined bias point. This surface-mount device is rated for 300mW maximum power dissipation and is supplied on tape and reel. The PEMD24-115 finds application in general-purpose switching and amplification circuits across various electronic systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 20mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 5V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 100kOhms |
| Resistor - Emitter Base (R2) | 100kOhms |
| Supplier Device Package | SOT-666 |
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