PEMD2,115
TRANS PREBIAS 1NPN 1PNP SOT666Manufacturer: Nexperia USA Inc.
Categories: Bipolar Transistor Arrays, Pre-Biased
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Nexperia USA Inc. PEMD2-115 is a pre-biased bipolar transistor array featuring one NPN and one PNP transistor within a SOT-666 package. This dual transistor configuration includes integrated base resistors of 22kOhms for both the NPN and PNP elements, simplifying circuit design. The device offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. With a minimum DC current gain (hFE) of 60 at 5mA and 5V, and a Vce saturation of 150mV at 500µA and 10mA, it is suitable for applications requiring low power switching and signal amplification. The maximum power dissipation is 300mW. This component is commonly utilized in consumer electronics and industrial automation systems. It is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 5V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | 22kOhms |
| Supplier Device Package | SOT-666 |
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