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Bipolar Transistor Arrays, Pre-Biased

PEMD19,115

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PEMD19,115

TRANS PREBIAS 1NPN 1PNP SOT666

Manufacturer: Nexperia USA Inc.

Categories: Bipolar Transistor Arrays, Pre-Biased

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Nexperia USA Inc. PEMD19-115 is a dual pre-biased bipolar transistor array featuring one NPN and one PNP transistor in a SOT-666 package. This surface mount component offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The integrated base resistors include a 22kOhm resistor for the NPN input. With a power dissipation rating of 300mW and a minimum DC current gain (hFE) of 100 at 1mA, 5V, this device is suitable for applications requiring simplified circuitry and consistent switching performance. Typical applications include digital logic interfacing, switching circuits, and general-purpose amplification in consumer electronics and industrial control systems. The component is supplied on tape and reel.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max300mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic150mV @ 500µA, 10mA
Current - Collector Cutoff (Max)1µA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1mA, 5V
Frequency - Transition-
Resistor - Base (R1)22kOhms
Resistor - Emitter Base (R2)-
Supplier Device PackageSOT-666

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