PEMD18,115
TRANS PREBIAS 1NPN 1PNP SOT666Manufacturer: Nexperia USA Inc.
Categories: Bipolar Transistor Arrays, Pre-Biased
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Nexperia USA Inc. PEMD18-115 is a pre-biased bipolar transistor array featuring a complementary 1 NPN and 1 PNP configuration in a SOT-666 package. This dual transistor is designed for surface mounting and offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It includes integrated base resistors with values of 4.7kOhm for the NPN and 10kOhm for the PNP, simplifying circuit design and reducing component count. The device exhibits a minimum DC current gain (hFE) of 50 at 10mA collector current and 5V collector-emitter voltage, with a saturation voltage of 100mV at 500µA base current and 10mA collector current. Typical applications for this component include switching circuits and digital logic interfaces across various electronics industries. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | SOT-666 |
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