PEMD17,115
TRANS PREBIAS 1NPN 1PNP SOT666Manufacturer: Nexperia USA Inc.
Categories: Bipolar Transistor Arrays, Pre-Biased
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Nexperia USA Inc. offers the PEMD17-115, a pre-biased bipolar transistor array featuring one NPN and one PNP transistor in a single SOT-666 package. This dual transistor configuration is designed for high-volume surface mount applications, commonly found in consumer electronics and industrial control systems. The PEMD17-115 provides a collector current capability of up to 100mA with a collector-emitter breakdown voltage of 50V. It integrates internal base resistors of 47kOhms for the NPN and 22kOhms for the PNP, simplifying circuit design and reducing component count. The device exhibits a minimum DC current gain (hFE) of 60 at 5mA collector current and 5V Vce, with a saturation voltage of 150mV at 500µA base current and 10mA collector current. The maximum power dissipation is 300mW. This component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 5V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | 22kOhms |
| Supplier Device Package | SOT-666 |
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