PEMD16,115
TRANS PREBIAS 1NPN 1PNP SOT666Manufacturer: Nexperia USA Inc.
Categories: Bipolar Transistor Arrays, Pre-Biased
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Nexperia USA Inc. PEMD16-115 is a pre-biased bipolar transistor array featuring one NPN and one PNP transistor in a single SOT-666 package. This dual-transistor configuration simplifies circuit design by integrating base resistors, offering 22kOhms for the NPN and 47kOhms for the PNP. It supports a collector-emitter breakdown voltage of up to 50V and a maximum collector current of 100mA. The device boasts a minimum DC current gain (hFE) of 80 at 5mA and 5V, with a Vce saturation of 150mV at 500µA and 10mA. With a maximum power dissipation of 300mW and a collector cutoff current of 1µA, this component is suitable for applications in consumer electronics, industrial control, and communication systems where simplified switching and logic functions are required. It is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 5V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-666 |
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