PEMD13,115
TRANS PREBIAS 1NPN 1PNP SOT666Manufacturer: Nexperia USA Inc.
Categories: Bipolar Transistor Arrays, Pre-Biased
Quality Control: Learn More
Nexperia USA Inc. PEMD13-115 is a dual pre-biased bipolar transistor featuring one NPN and one PNP element within a SOT-666 package. This component offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The integrated base resistors are specified as 4.7kOhms for the NPN and 47kOhms for the PNP, facilitating simplified circuit design. With a maximum power dissipation of 300mW, this transistor array is suitable for surface mount applications. Typical DC current gain (hFE) is 100 at 10mA collector current and 5V Vce. Saturation voltage (Vce Sat) is 100mV at 250µA base current and 5mA collector current. The PEMD13-115 finds application in areas such as digital logic interfacing and general-purpose switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 5V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-666 |
Request a Quote
Clients Also Buy
NHUMD10F
TRANS PREBIAS 1NPN 1PNP 6TSSOP
PUMB3HX
PUMB3HX
PUMB3H-QF
PUMB3H-QF
