PEMD10,115
TRANS PREBIAS 1NPN 1PNP SOT666Manufacturer: Nexperia USA Inc.
Categories: Bipolar Transistor Arrays, Pre-Biased
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The Nexperia USA Inc. PEMD10-115 is a pre-biased bipolar transistor array featuring one NPN and one PNP transistor in a single SOT-666 package. This dual transistor configuration simplifies circuit design by incorporating internal base resistors (2.2kO for the NPN and 47kO for the PNP) to provide a defined quiescent current. With a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, it is suitable for applications requiring switching or amplification. The device offers a minimum DC current gain (hFE) of 100 at 10mA collector current and 5V collector-emitter voltage. Saturation voltage is specified at 100mV for typical operating conditions. Power dissipation is rated at 300mW. This component finds application in consumer electronics and industrial control systems where reduced component count and simplified board layout are advantageous. The PEMD10-115 is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 5V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 2.2kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-666 |
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