PEMB17,115
TRANS PREBIAS 2PNP 50V SOT666Manufacturer: Nexperia USA Inc.
Categories: Bipolar Transistor Arrays, Pre-Biased
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The Nexperia USA Inc. PEMB17-115 is a pre-biased bipolar transistor array featuring two PNP transistors in a single SOT-666 package. This device offers a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA, with a power dissipation of 300mW. Key electrical characteristics include a minimum DC current gain (hFE) of 60 at 5mA and 5V, and a saturation voltage (Vce Sat) of 150mV at 500µA and 10mA. Integrated base resistors of 47kOhms (R1) and 22kOhms (R2) are included, simplifying circuit design. The PEMB17-115 is suitable for applications in consumer electronics, industrial automation, and communication systems requiring precise switching and signal amplification. It is supplied in tape and reel packaging for efficient automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 5V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | 22kOhms |
| Supplier Device Package | SOT-666 |
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