PEMB15,115
TRANS PREBIAS 2PNP 50V SOT666Manufacturer: Nexperia USA Inc.
Categories: Bipolar Transistor Arrays, Pre-Biased
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Nexperia USA Inc. PEMB15-115 is a dual PNP pre-biased bipolar transistor array housed in a SOT-666 package. This component features two PNP transistors with built-in base resistors, simplifying design and reducing component count. It offers a collector-emitter breakdown voltage (Vce) of 50V and a maximum collector current (Ic) of 100mA. The device exhibits a minimum DC current gain (hFE) of 30 at 10mA and 5V. Saturation voltage (Vce Sat) is specified at 150mV maximum for 500µA base current and 10mA collector current. The integrated base resistors are 4.7kOhms (R1) and 4.7kOhms (R2). With a maximum power dissipation of 300mW, this transistor array is suitable for surface mount applications. It is commonly utilized in consumer electronics, industrial control, and logic level shifting applications. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | 4.7kOhms |
| Supplier Device Package | SOT-666 |
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