PEMB13,115
TRANS PREBIAS 2PNP 50V SOT666Manufacturer: Nexperia USA Inc.
Categories: Bipolar Transistor Arrays, Pre-Biased
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Nexperia USA Inc. PEMB13-115 is a dual PNP pre-biased bipolar transistor array housed in a SOT-666 package. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The integrated base resistors are 4.7kOhms (R1) and 47kOhms (R2), providing a minimum DC current gain (hFE) of 100 at 10mA collector current and 5V Vce. Saturation voltage is specified at a maximum of 100mV at 250µA base current and 5mA collector current. The device has a maximum power dissipation of 300mW and a collector cutoff current of 1µA. The PEMB13-115 is commonly employed in digital logic, interface circuits, and general-purpose switching applications across various industrial and consumer electronics sectors. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 5V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-666 |
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