PEMB11,115
TRANS PREBIAS 2PNP 50V SOT666Manufacturer: Nexperia USA Inc.
Categories: Bipolar Transistor Arrays, Pre-Biased
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Nexperia USA Inc. PEMB11-115 is a dual PNP pre-biased bipolar junction transistor. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The built-in base resistors are specified at 10kOhms for both R1 and R2. With a transition frequency of 180MHz and a maximum power dissipation of 300mW, the PEMB11-115 is suitable for applications requiring low power switching and signal amplification. It offers a minimum DC current gain (hFE) of 30 at 5mA collector current and 5V collector-emitter voltage. The saturation voltage (Vce Sat) is a maximum of 150mV at 500µA base current and 10mA collector current. This Nexperia device is supplied in a SOT-666 surface mount package and is available on tape and reel. Its characteristics make it applicable in consumer electronics and telecommunications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Frequency - Transition | 180MHz |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | SOT-666 |
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