PEMB10,115
TRANS PREBIAS 2PNP 50V SOT666Manufacturer: Nexperia USA Inc.
Categories: Bipolar Transistor Arrays, Pre-Biased
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Nexperia USA Inc. PEMB10-115 is a dual PNP pre-biased bipolar transistor array designed for surface mount applications. This component features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. The integrated base resistors are 2.2kOhms (R1) and 47kOhms (R2), enabling simplified circuit designs. With a power dissipation of 300mW and a minimum DC current gain (hFE) of 100 at 10mA and 5V, this transistor array offers robust performance. The saturation voltage (Vce Sat) is specified at 100mV maximum for an input of 250µA and 5mA collector current. Packaged in a SOT-666, it is supplied on tape and reel. This device is qualified to AEC-Q101 standards, making it suitable for automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 5V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 2.2kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-666 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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