NP82N06NLG-S18-AY
MOSFET N-CH 60V 82A TO262Manufacturer: NEC Corporation
Categories: Single FETs, MOSFETs
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NEC Corporation NP82N06NLG-S18-AY is an N-Channel power MOSFET designed for high-current applications. This component features a Vdss rating of 60V and a continuous drain current capability of 82A at case temperature. The low Rds(on) of 7.4mOhm at 41A and 10V gate drive, coupled with a gate charge of 160nC at 10V, ensures efficient switching performance. With a maximum junction temperature of 175°C and power dissipation of 143W at case temperature, it is suitable for demanding thermal environments. The device is housed in a TO-262 package, facilitating through-hole mounting. The NP82N06NLG-S18-AY finds application in power supplies, motor control, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 82A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.4mOhm @ 41A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 143W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-262 |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8550 pF @ 25 V |
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