NP82N055NUG-S18-AY
MOSFET N-CH 55V 82A TO262Manufacturer: NEC Corporation
Categories: Single FETs, MOSFETs
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NEC Corporation NP82N055NUG-S18-AY is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a drain-to-source voltage (Vdss) of 55V and a continuous drain current (Id) capability of 82A at 25°C (Tc). The low on-resistance (Rds On) of 6mOhm at 41A and 10V Vgs ensures efficient power transfer. With a maximum junction temperature of 175°C and a continuous drain current rating of 82A at case temperature, it is suitable for high-power switching operations. Key parameters include a gate charge (Qg) of 160 nC at 10V and input capacitance (Ciss) of 9600 pF at 25V. The device is housed in a TO-262-3 Long Leads package for through-hole mounting. This MOSFET is utilized in power supplies, automotive electronics, and industrial motor control systems. Its robust construction and electrical characteristics make it a reliable choice for power conversion and management.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 82A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 41A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 143W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9600 pF @ 25 V |
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