NP82N055MUG-S18-AY
MOSFET N-CH 55V 82A TO220Manufacturer: NEC Corporation
Categories: Single FETs, MOSFETs
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NEC Corporation NP82N055MUG-S18-AY is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 82A at 25°C (Tc). With a low On-Resistance (Rds On) of 6mOhm at 41A and 10V Vgs, it minimizes conduction losses. The device boasts a maximum junction temperature of 175°C and a significant power dissipation capability of 143W (Tc). Key parameters include a gate charge (Qg) of 160 nC @ 10V and input capacitance (Ciss) of 9600 pF @ 25V. Packaged in a TO-220-3 Full Pack for through-hole mounting, this MOSFET is suitable for power conversion, motor control, and power management systems across various industrial sectors.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 82A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 41A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 143W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9600 pF @ 25 V |
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