Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Single Bipolar Transistors

MJW16212

Banner
productimage

MJW16212

POWER BIPOLAR TRANSISTOR

Manufacturer: Motorola

Categories: Single Bipolar Transistors

Quality Control: Learn More

Bipolar (BJT) Transistor NPN 650 V 10 A 2.75MHz 150 W Through Hole TO-247

Additional Information

Series: SCANSWITCH™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-247-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 2.2A, 5.5A
Current - Collector Cutoff (Max)250µA
DC Current Gain (hFE) (Min) @ Ic, Vce4 @ 10A, 5V
Frequency - Transition2.75MHz
Supplier Device PackageTO-247
Current - Collector (Ic) (Max)10 A
Voltage - Collector Emitter Breakdown (Max)650 V
Power - Max150 W

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
BUL44D2

POWER BIPOLAR TRANSISTOR

product image
MJH10012

TRANS NPN DARL 400V 10A TO3

product image
XPC860ZP33C1

RISC MICROPROCESSOR, 32 BIT, POW