LN60A01ES-LF-Z
MOSFET 3N-CH 600V 0.08A 8SOICManufacturer: Monolithic Power Systems Inc.
Categories: FET, MOSFET Arrays
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Monolithic Power Systems Inc. LN60A01ES-LF-Z is a MOSFET array featuring three N-channel, common gate configuration transistors. This device operates with a Drain to Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 80mA at 25°C. The On-Resistance (Rds On) is a maximum of 190 Ohms at 10mA and 10V.
The LN60A01ES-LF-Z is supplied in an 8-SOIC (0.154", 3.90mm Width) package, suitable for surface mounting. It has a maximum power dissipation of 1.3W and an operating temperature range of -20°C to 125°C (TJ). The threshold voltage (Vgs(th)) is a maximum of 1.2V at 250µA. This component is commonly utilized in power supply and lighting applications. The component is provided in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 3 N-Channel, Common Gate |
| Operating Temperature | -20°C ~ 125°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.3W |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 80mA |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 190Ohm @ 10mA, 10V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | 8-SOIC |
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