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WS512K8-85CCE

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WS512K8-85CCE

SRAM Module, 512KX8, 85ns, CMOS, CDMA32

Manufacturer: Microsemi Corporation

Categories: SRAMs

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Microsemi Corporation WS512K8-85CCE is a 512K x 8 asynchronous CMOS SRAM module. This memory component offers a maximum access time of 85 nanoseconds and operates with a nominal supply voltage of 5V, supporting a range of 4.5V to 5.5V. The WS512K8 series module features a ceramic, metal-sealed cofired package with a rectangular shape and through-hole termination, conforming to the R-CDMA-T32 standard. Its robust construction makes it suitable for applications in industrial control, telecommunications infrastructure, and military systems where high reliability is paramount. The memory organization is 512K words by 8 bits, providing a total memory density of 4194304 bits. This parallel SRAM module is designed for demanding operating environments, with an operational temperature range from 0°C to 70°C.

Additional Information

Series: WS512K8RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_Time_Max85.0000000000000000
JESD_30_CodeR-CDMA-T32
Memory_Density4194304.0000000000000000
Memory_IC_TypeSRAM MODULE
Memory_Organization512KX8
Memory_Width8
Number_of_Functions1
Number_of_Terminals32
Number_of_Words524288.0000000000000000
Number_of_Words_Code512k
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialCERAMIC, METAL-SEALED COFIRED
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Parallel_SerialParallel
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountNo
Terminal_FormTHROUGH-HOLE
Terminal_PositionDual

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