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WS512K8-70CQE

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WS512K8-70CQE

SRAM Module, 512KX8, 70ns, CMOS, CDMA32

Manufacturer: Microsemi Corporation

Categories: SRAMs

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The Microsemi Corporation WS512K8-70CQE is a CMOS SRAM Module featuring a 512K x 8 memory organization and a maximum access time of 70ns. This asynchronous SRAM operates within a supply voltage range of 4.5V to 5.5V, with a nominal 5V requirement. Its memory density is 4Mb, comprising 524,288 words. The component is housed in a rectangular, metal-sealed cofired ceramic package with a microelectronic assembly style. It utilizes through-hole mounting with dual in-line terminals. The operating temperature range spans from -55°C to +125°C. This component is designed for applications requiring high-reliability memory solutions, often found in aerospace, defense, and industrial control systems. The R-CDMA-T32 JESD-30 code indicates its specific packaging and construction characteristics.

Additional Information

Series: WS512K8RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_Time_Max70.0000000000000000
JESD_30_CodeR-CDMA-T32
Memory_Density4194304.0000000000000000
Memory_IC_TypeSRAM MODULE
Memory_Organization512KX8
Memory_Width8
Number_of_Functions1
Number_of_Terminals32
Number_of_Words524288.0000000000000000
Number_of_Words_Code512k
Operating_ModeAsynchronous
Operating_Temperature_Max125.0
Operating_Temperature_Min-55.0
Package_Body_MaterialCERAMIC, METAL-SEALED COFIRED
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Parallel_SerialParallel
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountNo
Terminal_FormTHROUGH-HOLE
Terminal_PositionDual

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